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HT82V733 240mA Audio Power Amp
Features
* High signal-to-noise ratio * High slew rate * Low distortion * Large output voltage swing * Excellent power supply ripple rejection * Low power consumption * Short-circuit elimination * Wide temperature operating range * No switch ON/OFF clicks * Low standby current * Power off control * Direct drive speaker * 8-pin DIP/SOP package
General Description
HT82V733 is an integrated class AB mono speaker driver contained in an SOP-8 package. The device is fabricated in a CMOS process and has been primarily developed for portable digital audio applications.
Block Diagram
OUTN A u d In VRE. VSS VDD R B IA S CE R 10R R AMP2 AMP1 OUTP
Pin Assignment
OUTN 1 2 3 4 5 6 7 A u d In VRE. VSS 8 VDD OUTP NC CE
H T82V733 8 D IP -A /S O P -A
Pin Description
Pin No. 1 2 3 4 5 6 7 8 Pin Name OUTN Aud In VREF VSS CE NC OUTP VDD I/O O I O 3/4 I 3/4 O 3/4 Negative output Audio input Speaker non-inverting input voltage reference Negative power supply, ground Chip enable, low active Not connected Positive output Positive power supply Description
Absolute Maximum Ratings
Supply Voltage ...........................VSS-0.3V to VSS+5.5V Input Voltage..............................VSS-0.3V to VDD+0.3V Storage Temperature ............................-50C to 125C Operating Temperature...........................-20C to 70C
Note: These are stress ratings only. Stresses exceeding the range specified under Absolute Maximum Ratings may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability.
Rev. 1.10
1
January 6, 2003
HT82V733
Electrical Characteristics
Symbol Supplies VDD VSS ISTB IDD Supply Voltage Negative Supply Voltage Standby Current 3/4 5V 3/4 3/4 3/4 3/4 3/4 Vi=0, No load Operating Current VP-P=500mV, fi=1kHz No load VP-P=500mV, fi=1kHz No load 2.4 3/4 3/4 2 4.8 15 5.0 0 3/4 4 12.3 60 5.5 3/4 1 10 mA 23.5 140 mW V V mA Parameter Test Conditions VDD Conditions Min. Typ. VSS=0V, Ta=25C Max. Unit
Ptot
Total Power Dissipation
3/4
DC Characteristics VI(OS) 5V Input Offset Voltage 3V IO Maximum Output Current (THD+N)/S<1% 5V Current 3V Current RL=16W 5V RL=8W VO Output Voltage Swing (THD+N)/S<1% RL=4W RL=16W 3V RL=8W RL=4W PSRR Power Supply Rejection Ratio 5V fi=100Hz; 3V Vripple(p-p)=100mV 3/4 3/4 3/4 3/4 3/4 1.2 1.8 2.1 0.6 0.9 1.1 3/4 3/4 12 2.5 240 160 3/4 3/4 3/4 3/4 3/4 3/4 71 62 3/4 3/4 3/4 3/4 4 3.4 3 2.3 1.9 1.7 3/4 3/4 dB V V mV
mA
AC Characteristics 5V (THD+N)/S Total Harmonic Distortion Plus Noise-to-signal Ratio 3V 5V S/N Signal-to-noise Ratio 3V VO(p-p)=3.5V RL=8W VO(p-p)=1.5V RL=8W 3/4 3/4 3/4 3/4 3/4 3/4 3/4 -48 3 -30 3 60 58 3/4 3/4 3/4 3/4 3/4 3/4 dB % dB % dB
Rev. 1.10
2
January 6, 2003
HT82V733
Functional Description
OUTP Rising Time (tR) When CE active low, the HT82V733 need rising time to output fully on OUTP pin. However, the rising time depends on C1. (*see the application circuits)
CE
OUTP
tR
Capacitor tR Voltage 2.2V 3V 4V 15ms 15ms 15ms 30ms 30ms 30ms 90ms 90ms 90ms 185ms 185ms 185ms 0.1mF 1mF 4.7mF 10mF
For battery based applications, power consumption is a key issue, therefore the amplifier should be turned off when in the standby state. In order to eliminate any speaker sound bursts while turning the amplifier on, the application circuit, which will incorporate a capacitance value of C1, should be adjusted in accordance with the speaker s audio frequency response. A greater value of C1 will improve the noise burst while turning on the amplifier. The recommended operation sequence is: Turn On: audio1 signal standby (1/2 VDD) (R) enable amplifier (R) wait tR for amplifier ready (R) audio1 output Turn Off: audio1 signal finished (R) disable amplifier (R) wait tR for amplifier off (R) audio1 signal off
A u d io 1 tR EN OUT tR
If the application is not powered by batteries and there is no problem with amplifier On/Off issue, a capacitor value of 0.1uF for C1 is recommended.
Application Circuits
A u d io In R 3 C3 0 .1 m . 2 1 OUTN VDD A u d io In 8 C2 47m. 4 S peaker V
DD
C1 1m. CE
VRE. CE 5
H T82V733
OUTP 7 NC 6
Rev. 1.10
3
January 6, 2003
HT82V733
Package Information
8-pin DIP (300mil) Outline Dimensions
A B 1 8 5 4
H C D E . G
a
I
Symbol A B C D E F G H I a
Dimensions in mil Min. 355 240 125 125 16 50 3/4 295 335 0 Nom. 3/4 3/4 3/4 3/4 3/4 3/4 100 3/4 3/4 3/4 Max. 375 260 135 145 20 70 3/4 315 375 15
Rev. 1.10
4
January 6, 2003
HT82V733
8-pin SOP (150mil) Outline Dimensions
A 1
8
5 B 4
C
C' G D E .
H
a
Symbol A B C C D E F G H a
Dimensions in mil Min. 228 149 14 189 53 3/4 4 22 4 0 Nom. 3/4 3/4 3/4 3/4 3/4 50 3/4 3/4 3/4 3/4 Max. 244 157 20 197 69 3/4 10 28 12 10
Rev. 1.10
5
January 6, 2003
HT82V733
Product Tape and Reel Specifications
Reel Dimensions
T2 D
A
B
C
T1
SOP 8N Symbol A B C D T1 T2 Description Reel Outer Diameter Reel Inner Diameter Spindle Hole Diameter Key Slit Width Space Between Flange Reel Thickness Dimensions in mm 3301.0 621.5 13.0+0.5 -0.2 2.00.15 12.8+0.3 -0.2 18.20.2
Rev. 1.10
6
January 6, 2003
HT82V733
Carrier Tape Dimensions
D
E .
P0
P1
t
W C
B0
D1
P
K0 A0
SOP 8N Symbol W P E F D D1 P0 P1 A0 B0 K0 t C Description Carrier Tape Width Cavity Pitch Perforation Position Cavity to Perforation (Width Direction) Perforation Diameter Cavity Hole Diameter Perforation Pitch Cavity to Perforation (Length Direction) Cavity Length Cavity Width Cavity Depth Carrier Tape Thickness Cover Tape Width Dimensions in mm 12.0+0.3 -0.1 8.00.1 1.750.1 5.50.1 1.550.1 1.5+0.25 4.00.1 2.00.1 6.40.1 5.200.1 2.10.1 0.30.05 9.3
Rev. 1.10
7
January 6, 2003
HT82V733
Holtek Semiconductor Inc. (Headquarters) No.3, Creation Rd. II, Science Park, Hsinchu, Taiwan Tel: 886-3-563-1999 Fax: 886-3-563-1189 http://www.holtek.com.tw Holtek Semiconductor Inc. (Taipei Sales Office) 4F-2, No. 3-2, YuanQu St., Nankang Software Park, Taipei 115, Taiwan Tel: 886-2-2655-7070 Fax: 886-2-2655-7373 Fax: 886-2-2655-7383 (International sales hotline) Holtek Semiconductor Inc. (Shanghai Sales Office) 7th Floor, Building 2, No.889, Yi Shan Rd., Shanghai, China 200233 Tel: 021-6485-5560 Fax: 021-6485-0313 http://www.holtek.com.cn Holtek Semiconductor Inc. (Shenzhen Sales Office) 43F, SEG Plaza, Shen Nan Zhong Road, Shenzhen, China 518031 Tel: 0755-8346-5589 Fax: 0755-8346-5590 ISDN: 0755-8346-5591 Holtek Semiconductor Inc. (Beijing Sales Office) Suite 1721, Jinyu Tower, A129 West Xuan Wu Men Street, Xicheng District, Beijing, China 100031 Tel: 010-6641-0030, 6641-7751, 6641-7752 Fax: 010-6641-0125 Holmate Semiconductor, Inc. (North America Sales Office) 46712 Fremont Blvd., Fremont, CA 94538 Tel: 510-252-9880 Fax: 510-252-9885 http://www.holmate.com Copyright O 2003 by HOLTEK SEMICONDUCTOR INC. The information appearing in this Data Sheet is believed to be accurate at the time of publication. However, Holtek assumes no responsibility arising from the use of the specifications described. The applications mentioned herein are used solely for the purpose of illustration and Holtek makes no warranty or representation that such applications will be suitable without further modification, nor recommends the use of its products for application that may present a risk to human life due to malfunction or otherwise. Holteks products are not authorized for use as critical components in life support devices or systems. Holtek reserves the right to alter its products without prior notification. For the most up-to-date information, please visit our web site at http://www.holtek.com.tw.
Rev. 1.10
8
January 6, 2003

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